K4E160412D FOAIE DE DATE,CIRCUIT,FUNCŢIA

K4E160412D Datasheet PDF

Producator	Impachetare	Descriere	PDF	Temperatura
Samsung semiconductor		4Bit CMOS Dynamic with Extended Data	K4E160412D PDF	Min°C \| Max°C

Samsung semiconductor K4E160411D
4Bit CMOS Dynamic with Extended Data
Samsung K4E160411D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
Samsung K4E160411D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
Samsung semiconductor K4E160412D
4Bit CMOS Dynamic with Extended Data
Samsung K4E160412D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
Samsung K4E160412D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.