ON-SEMICONDUCTOR FOAIE DE DATE
| PartNo | Producator | Descriere |
|---|---|---|
| IRF433 | Fairchild Semiconductor | N-Channel Power MOSFETs, 450V/500V |
| IRF440 | Samsung semiconductor | N-CHANNEL POWER MOSFETS |
| IRF440-443 | Fairchild Semiconductor | N-Channel Power MOSFETs, V/500V |
| IRF441 | Fairchild Semiconductor | N-Channel Power MOSFETs, V/500V |
| IRF442 | Fairchild Semiconductor | N-Channel Power MOSFETs, V/500V |
| IRF443 | Fairchild Semiconductor | N-Channel Power MOSFETs, V/500V |
| IRF450 | Samsung semiconductor | N-CHANNEL POWER MOSFETS |
| IRF451 | Samsung semiconductor | N-CHANNEL POWER MOSFETS |
| IRF452 | Samsung semiconductor | N-CHANNEL POWER MOSFETS |
| IRF453 | Samsung semiconductor | N-CHANNEL POWER MOSFETS |
| IRF460 | Seme | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| IRF4905 | International Rectifier | Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) |
| IRF4905L | International Rectifier | Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) |
| IRF4905S | International Rectifier | Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) |
| IRF9130 | Samsung semiconductor | P-CHANNEL POWER MOSFETS |
| IRF9130SMD | Seme | P-CHANNEL POWER MOSFET HI.REL APPLICATIONS |
| IRF9131 | Samsung semiconductor | P-CHANNEL POWER MOSFETS |
| IRF9132 | Samsung semiconductor | P-CHANNEL POWER MOSFETS |
| IRF9140 | Seme | P-CHANNEL POWER MOSFET |
| IRF9150 | Intersil Corporation | -25A, -100V, 0.150 P-Channel Power MOSFET |
| IRF9230 | International Rectifier | TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) |
| IRF9231 | Intersil Corporation | -5.5A -6.5A, -150V -200V, P-Channel Power MOSFETs |
| IRF9232 | Intersil Corporation | -5.5A -6.5A, -150V -200V, P-Channel Power MOSFETs |
| IRF9233 | Intersil Corporation | -5.5A -6.5A, -150V -200V, P-Channel Power MOSFETs |
| IRF9240 | Seme | P-CHANNEL POWER MOSFET |
| IRF9240-SMD | Seme | P-CHANNEL POWER MOSFET |
| IRF9410 | International Rectifier | Power MOSFET(Vdss=30V, Rds(on)=0.030ohm) |
| IRF9510 | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A) |
| IRF9510S | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A) |
| IRF9520 | Intersil Corporation | 100V, 0.600 P-Channel Power MOSFET |
| IRF9520N | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) |
| IRF9520NL | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) |
| IRF9520NS | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) |
| IRF9521 | Supertex, | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
| IRF9522 | Supertex, | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
| IRF9523 | Supertex, | P-Channel Enhancement-Mode Vertical DMOS Power FETs |
| IRF9530 | International Rectifier | TRANSISTORS |
| IRF9530-220M | Seme | P-CHANNEL POWER MOSFET HI.REL APPLICATIONS |
| IRF9530N | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) |
| IRF9530NL | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) |
| IRF9530NS | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) |
| IRF9530NSTRR | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A) |
| IRF9530S | Seme | P-CHANNEL POWER MOSFET HI.REL APPLICATIONS |
| IRF9530SMD | Seme | P-CHANNEL POWER MOSFET HI.REL APPLICATIONS |
| IRF9531 | Samsung semiconductor | P-CHANNEL POWER MOSFETS |
| IRF9532 | International Rectifier | TRANSISTORS |
| IRF9533 | Samsung semiconductor | P-CHANNEL POWER MOSFETS |
| IRF9540 | Intersil Corporation | 100V, 0.200 P-Channel Power MOSFETs |
| IRF9540N | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| IRF9540NL | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| IRF9540NS | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| IRF9540NSTRL | International Rectifier | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| IRF9610 | International Rectifier | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) |
| IRF9610S | International Rectifier | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) |
| IRF9620 | Intersil Corporation | 3.5A, 200V, 1.500 P-Channel Power MOSFET |
| IRF9620S | International Rectifier | Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A) |
| IRF9630 | International Rectifier | Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) |
| IRF9630S | International Rectifier | Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) |
| IRF9640 | International Rectifier | Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A) |
| IRF9640S | International Rectifier | Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A) |
| IRF9952 | International Rectifier | Power MOSFET(Vdss= -30V) |
| IRF9953 | International Rectifier | Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm) |
| IRF9956 | International Rectifier | Power MOSFET(Vdss=30V, Rds(on)=0.10ohm) |
| IRF9Z14 | International Rectifier | Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) |
| IRF9Z14S | International Rectifier | Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) |
| IRF9Z24 | International Rectifier | POWER MOSFET |
| IRF9Z24L | International Rectifier | Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A) |
| IRF9Z24N | International Rectifier | Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) |
| IRF9Z24NL | International Rectifier | Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) |
| IRF9Z24NS | International Rectifier | Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) |
| IRF9Z24S | International Rectifier | Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A) |
| IRF9Z34L | International Rectifier | Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A) |
| IRF9Z34N | International Rectifier | Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) |
| IRF9Z34NL | International Rectifier | Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) |
| IRF9Z34NS | International Rectifier | Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) |
| IRF9Z34S | International Rectifier | Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A) |
| 2SA1011 | Mospec Semiconductor | POWER TRANSISTORS(1.5A,160V,25W) |
| 2SA1012 | Mospec Semiconductor | POWER TRANSISTORS(5A,50V,25W) |
| 2SA1013 | Toshiba Semiconductor | TRANSISTOR (COLOR VERT. DEFELCTION OUTPUT APPLICATIONS) |
| 2SA1015 | Toshiba Semiconductor | EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER) |
| 2SA1015GR | Micro Electronics | SILICON TRANSISTOR |
| 2SA1015L | Toshiba Semiconductor | TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
| 2SA1016 | Sanyo Semicon Device | High-Voltage Low-Noise Applications |
| 2SA1016K | Sanyo Semicon Device | High-Voltage Low-Noise Applications |
| 2SA1018 | Panasonic Semiconductor | Silicon epitaxial planer type |
| 2SA1020 | Toshiba Semiconductor | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) |
| 2SA1022 | Panasonic Semiconductor | Silicon epitaxial planer type |
| 2SA1025 | Hitachi Semiconductor | Silicon Epitaxial |
| 2SA1029 | Hitachi Semiconductor | Silicon Epitaxial |
| 2SA1030 | Hitachi Semiconductor | Silicon Epitaxial |
| 2SA1031 | Hitachi Semiconductor | Silicon Epitaxial |
| 2SA1032 | Hitachi Semiconductor | Silicon Epitaxial |
| 2SA1034 | Panasonic Semiconductor | Silicon epitaxial planer type |
| 2SA1035 | Panasonic Semiconductor | Silicon epitaxial planer type |
| 2SA1036K | Rohm | Medium Power Transistor (-32V, -0.5A) |
| 2SA1037 | Rohm | General Purpose Transistor |
| 2SA1037AK | Rohm | General Purpose Transistor |
| 2SA1037AKQLT1 | Leshan Radio Company | General Purpose Transistors(PNP Silicon) |
| 2SA1037AKRLT1 | Leshan Radio Company | General Purpose Transistors(PNP Silicon) |
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